Device Reliability of Advanced CMOS Technologies
Flash Memory Technology
Characterization of MOS Capacitor, and MOSFET with I-V, Generation and Recombination lifetime, and C-f Dependence
Generation and Recombination Lifetime Measurement of Epi Wafers and Denuded Wafers
Gate Oxide Integrity (GOI) Characterization
Detection of Impurities (Fe, Cu ,Pt, Au, Cr ..etc) by DLTS
Silvaco Simulation for extracting spice model parameter
Display Device (OLED, Thin Film Device on Flexible/Glass Substrate)
Low Temperature Poly Silicon TFTs
Journal Articles
(2024)
Facile diffusion of sulfur and fluorine into a-IGTO thin films for high-performance and reliability of transparent amorphous oxide semiconductor thin-film transistors.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
169,
1
(2023)
High-Density 3-D NAND Cell Array Design With Hybrid Bonding.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
70,
11
(2023)
Low-Temperature Processed Complementary Inverter With Tin-Based Transparent Oxide Semiconductors.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
70,
10
(2023)
Performance and reliability enhancement of flexible low-temperature polycrystalline silicon thin-film transistors via activation-annealing temperature optimization.
THIN SOLID FILMS.
780,
(2023)
Effects of Polycrystalline Silicon Plug Defect on DRAM Characteristics.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
70,
7
(2023)
Electrical Performance and Reliability Enhancement of a-IGZO TFTs via Post-N<sub>2</sub>O Plasma Optimization.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
70,
7
(2023)
String-level compact modeling for dynamic operation and transient analysis of 3D charge trapping flash memory.
SOLID-STATE ELECTRONICS.
204,
1
(2023)
High-pressure H2O post-annealing for improving reliability of LTPS and a-IGZO thin-film transistors within a coplanar structure.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING.
157,
(2022)
Charge Pumping Technique to Measure Polarization Switching Charges of FeFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES.
69,
9
(2022)
Maximizing the Productivity of Photolithography Equipment by Machine Learning Based on Time Analytics.
APPLIED SCIENCES-BASEL.
12,
16
(2022)
The Performance Enhancement of PMOSFETs and Inverter Chains at Low Temperature and Low Voltage by Removing Plasma-Damaged Layers.
ELECTRONICS.
11,
13
(2022)
A Study on the Role of Pre-Cleaning and a New Method to Strengthen Gate Oxide Quality.
NANOMATERIALS.
12,
9
(2021)
Effects of polyimide curing on image sticking behaviors of flexible displays.
SCIENTIFIC REPORTS.
11,
1
(2021)
Enhanced hole injection characteristics of a top emission organic light-emitting diode with pure aluminum anode.
NANOMATERIALS.
11,
11
(2021)
Improved charging phenomenon with a modified barrier structure for flexible displays fabricated on polyimide substrates.
ELECTRONICS LETTERS.
57,
19
(2021)
Effect of ALD- and PEALD- Grown Al2O3 Gate Insulators on Electrical and Stability Properties for a-IGZO Thin-Film Transistor.
ELECTRONIC MATERIALS LETTERS.
17,
4
(2021)
Reliability Analysis on TiN Gated NMOS Transistors.
SCIENCE OF ADVANCED MATERIALS.
13,
6
(2021)
Threshold voltage instability and polyimide charging effects of LTPS TFTs for flexible displays.
SCIENTIFIC REPORTS.
11,
1
(2021)
Effect of PECVD Gate SiO2 Thickness on the Poly-Si/SiO2 Interface in Low-Temperature Polycrystalline Silicon TFTs.
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY.
16,
2
(2021)
Leakage Current Analysis Method for Metal Insulator Semiconductor Capacitors Through Low-Frequency Noise Measurement.
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY.
21,
3
Publications
(2009)
디스플레이 공학.
홍능과학 출판사.
Solo
(2008)
LCD 제조공정과 장비.
내하출판사.
Solo
(2008)
반도체소자분석.
텍스트북스.
Co-author
Patent/Intellectual Property
DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR.
US 8624298 B2.
20150107.
UNITED STATES
ORGANIC ELECTROLUMINESCENT DISPLAY.
USOO8773406B2.
20140708.
UNITED STATES
FLAT PANEL DISPLAY.
USOO8711074B2.
20140429.
UNITED STATES
THIN FILM TRANSISTOR.
US 8,704,305 B2.
20140422.
UNITED STATES
METHOD OF FABRICATING THIN FILM TRANSISTOR.
US 8652885B2.
20140218.
UNITED STATES
Display Device including TFT.
0001004.
20140107.
UNITED STATES
OLED Display and Fabrication.
001003.
20131203.
UNITED STATES
OLED element and Method of Manufacturing the same.
0001001.
20131126.
UNITED STATES
Photo sensor and OLED display using the same.
00100.
20130702.
UNITED STATES
레이저 드릴링 가공홀 검사방법.
00010005.
20130618.
KOREA, REPUBLIC OF
플라즈마 증착 기술을 이용한 나노결정 실리콘막 구조체, 그의 형성방법, 나노결정 실리콘막 구조체를 구비하는 비휘발성 메모리 소자 및 그의 형성방법.
10-2008-0128318.
20120404.
KOREA, REPUBLIC OF
NANOCRYSTAL SILICON LAYER STRUCTURES FORMED USING PLASMA DEPOSITION TECHNIQUE METHODS OF FORMING THE SAME, NONVOLATILE MEMORY DEVICES HAVING THE NANOCRYSTAL SILICON LAYER STRUCTURES, AND METHODS OF FABRICATING THE NONVOLATILE MEMORY DEVICES.
12/388,846.
20120207.
UNITED STATES
ORGANIC LIGHT-EMITTING DISPLAY DEVICE.
2007-683775.
20110920.
UNITED STATES
THIN FILM TRANSISTOR, METHOD OF FORMING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME.
2009-388829.
20110920.
UNITED STATES
THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME.
2007-760876.
20110906.
UNITED STATES
플라즈마 증착 기술을 이용한 나노결정 실리콘만 구조체, 그의 형성방법, 나노결정 실리콘막 구조체를 구비하는 비휘발성 메모리 소자 및 그의 형성방법.
2008-0128316.
20110831.
KOREA, REPUBLIC OF
METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING PHOTO DIODE.
2008-098653.
20110712.
UNITED STATES
Photo sensor and light emitting display having the same.
2008-222003.
20110712.
UNITED STATES
Light emitting display device and method of fabricating the same.
2008-219262.
20110329.
UNITED STATES
박막 트랜지스터, 그의 형성방법 및 박막 트랜지스터를 구비하는 평판 표시장치.
2008-0127918.
20110304.
KOREA, REPUBLIC OF
Conference Paper
(2019)
Capacitance-Voltage Characteristics of Solution-based HfZr-Silicate Gate Dielectrics.
The 26th International Display Workshops.
JAPAN
(2019)
Effects of Annealing Gas on Electrical Properties of La2O3 Gate Dielectrics.
The 26th International Display Workshops.
JAPAN
(2019)
Reduction of Oxide Defects in ZrO2/Al2O3/ZrO2 Dielectrics by Incorporating Hydrogen Peroxide.
The 26th International Display Workshops.
JAPAN
(2018)
Double-Layered Indium-Zinc-Oxide Thin Film
Transistors with an Addition of Hydrogen Peroxide.
the 25th International Display Workshops.
JAPAN
(2018)
Reduction of Charge Trapping in High-k HfZrO4 Gate Insulators.
The 25th International Display Workshops.
JAPAN
(2017)
Investigation of Mixed Host Emission Layer for Improving Charge Balance of Green Phosphorescent OLEDs.
IFFM 2017.
KOREA, REPUBLIC OF
(2017)
Optimization of Double Channel Structure in Indium Zinc Oxide based Amorphous oxide semiconductors esing solution processes.
IFFM 2017.
KOREA, REPUBLIC OF
(2017)
The effect of Hydrogen Peroxide on Solution Processed Zirconium Oxide Dielectric.
IFFM 2017.
KOREA, REPUBLIC OF
(2016)
Analysis of Interface Traps in P-type Poly-Si TFT using Charge pumping method.
International Conference on Electronic Materials and Nanotechnology for Green Environment.
KOREA, REPUBLIC OF
(2016)
Body Effect Measurement in DRAM Cell Transistor using Memory Test system.
ISTFA 2016: Conference Proceedings.
UNITED STATES
(2016)
Fabrication and Optimization of Hafnium Based materials for Gate Dielectric.
International Conference on Electronic Materials and Nanotechnology for Green Environment 2016.
KOREA, REPUBLIC OF
(2016)
Bias and Temperature Reliability of Amorphous Indium Tin Zinc Oxide Thin Film Transistor on SiO2, SiNx Gate Dielectric.
The 23rd International Display Workshops.
JAPAN
(2015)
A study on the characteristics of Indium tin oxide by halogen electro-chemical treatment.
IFFM 2015.
KOREA, REPUBLIC OF
(2015)
Optimized Solution Processed ZrO2 Dielectric Layer for Thin-Film Transistors.
IFFM 2015.
KOREA, REPUBLIC OF
(2015)
Solution-Processed Dual-Active-Layer Oxide Thin Film Transistor to Improve Electrical Performance.
IFFM 2015.
KOREA, REPUBLIC OF
(2015)
Charge Trapping of Solution Processed ZrO2 Dielectric with
Bias-Temperature Stress.
The 5th International Symposium on Organic and Inorganic
Electronic Materials and Related Nanotechnologies.
JAPAN
(2015)
Negative-Bias Temperature Instability Related with Gate Tunneling Mechanism.
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies.
JAPAN
(2015)
Solution-Processed IGZO/ITZO Dual-Active-Layer Thin Film Transistor
for High mobility and Improvement of Bias Stability.
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies.
JAPAN
(2015)
Temperature-Dependent Electrical Characteristics and Carrier Lifetime of Organic Light Emitting Diodes.
The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies.
JAPAN
(2014)
Analysis Method for characterization of the Weak Cells in DRAM Retention Time Distribution.
Micro and Nano Engineering.
SWITZERLAND
